Titre :	Etude des phenomenes d'adsorption des gaz sur des surfaces d'oxyde de zinc
Type de document :	texte imprimé
Auteurs :	HABIB ZAHMANI Abdeldjalil, Auteur
Année de publication :	2006
Importance :	90 p.
Langues :	Français (fre)
Catégories :	Physique:Traitement des surfaces et structure des matériaux
Mots-clés :	Boltzmann , l'adsorption gaz, semi-conducteur ,phenomenes
Résumé :	The surface propertiés of solid materials differ from those of volume , at surface , defects of various natures can be present , they make it possible surface to be interctive with the ambient condition , the multiple interactions state surface and elements of the semiconductor layers after adsorption of ethanol at various temperatures carred out between 100 C and 350 C the materials which were used fo the study are layers of ZnO , the samples of ZnOwere worked out by R.F sputtering method , the pulverized materials were deposited on plantes out of glass , the variations of the variations of the electric properties of the layers were followed by measurement of their surface electric resistance R the curves R =F (T ) (c) raised under air and under air+gaz at various temperatures are characteristic of a behavior of semiconductor
Directeur de thèse :	HAMZAOUI Saad

Etude des phenomenes d'adsorption des gaz sur des surfaces d'oxyde de zinc [texte imprimé] / HABIB ZAHMANI Abdeldjalil, Auteur . - 2006 . - 90 p.
Langues : Français (fre)

Catégories :	Physique:Traitement des surfaces et structure des matériaux
Mots-clés :	Boltzmann , l'adsorption gaz, semi-conducteur ,phenomenes
Résumé :	The surface propertiés of solid materials differ from those of volume , at surface , defects of various natures can be present , they make it possible surface to be interctive with the ambient condition , the multiple interactions state surface and elements of the semiconductor layers after adsorption of ethanol at various temperatures carred out between 100 C and 350 C the materials which were used fo the study are layers of ZnO , the samples of ZnOwere worked out by R.F sputtering method , the pulverized materials were deposited on plantes out of glass , the variations of the variations of the electric properties of the layers were followed by measurement of their surface electric resistance R the curves R =F (T ) (c) raised under air and under air+gaz at various temperatures are characteristic of a behavior of semiconductor
Directeur de thèse :	HAMZAOUI Saad