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Etude des phenomenes d'adsorption des gaz sur des surfaces d'oxyde de zinc / HABIB ZAHMANI Abdeldjalil

Public ISBD Titre : Etude des phenomenes d'adsorption des gaz sur des surfaces d'oxyde de zinc Type de document : texte imprimé Auteurs : HABIB ZAHMANI Abdeldjalil, Auteur Année de publication : 2006 Importance : 90 p. Langues : Français (fre) Catégories : Physique:Traitement des surfaces et structure des matériaux Mots-clés : Boltzmann , l'adsorption gaz, semi-conducteur ,phenomenes Résumé : The surface propertiés of solid materials differ from those of volume , at surface , defects of various natures can be present , they make it possible surface to be interctive with the ambient condition , the multiple interactions state surface and elements of the semiconductor layers after adsorption of ethanol at various temperatures carred out between 100 C and 350 C the materials which were used fo the study are layers of ZnO , the samples of ZnOwere worked out by R.F sputtering method , the pulverized materials were deposited on plantes out of glass , the variations of the variations of the electric properties of the layers were followed by measurement of their surface electric resistance R the curves R =F (T ) (c) raised under air and under air+gaz at various temperatures are characteristic of a behavior of semiconductor Directeur de thèse : HAMZAOUI Saad Etude des phenomenes d'adsorption des gaz sur des surfaces d'oxyde de zinc [texte imprimé] / HABIB ZAHMANI Abdeldjalil, Auteur . - 2006 . - 90 p. Langues : Français (fre) Catégories : Physique:Traitement des surfaces et structure des matériaux Mots-clés : Boltzmann , l'adsorption gaz, semi-conducteur ,phenomenes Résumé : The surface propertiés of solid materials differ from those of volume , at surface , defects of various natures can be present , they make it possible surface to be interctive with the ambient condition , the multiple interactions state surface and elements of the semiconductor layers after adsorption of ethanol at various temperatures carred out between 100 C and 350 C the materials which were used fo the study are layers of ZnO , the samples of ZnOwere worked out by R.F sputtering method , the pulverized materials were deposited on plantes out of glass , the variations of the variations of the electric properties of the layers were followed by measurement of their surface electric resistance R the curves R =F (T ) (c) raised under air and under air+gaz at various temperatures are characteristic of a behavior of semiconductor Directeur de thèse : HAMZAOUI Saad

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