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Lateral power transistors in integrated circuits / Tobias Erlbacher

Public ISBD Titre : Lateral power transistors in integrated circuits Type de document : texte imprimé Auteurs : Tobias Erlbacher, Auteur Editeur : New York, Dordrecht, Heidelberg : Springer Année de publication : 2014 Importance : 223 p. Présentation : couv. ill. en coul., ill. Format : 24 cm. ISBN/ISSN/EAN : 978-3-319-00499-0 Langues : Anglais (eng) Catégories : ELECTROTECHNIQUE Index. décimale : 10-05 Electronique de puissance et industrielle Résumé : The book summarizes and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. In its first part, the book motivates the necessity for lateral power transistors by a top-down approach: First, it presents typical energy conversion applications in modern industrial, automotive and consumer electronics. Next, it introduces common circuit topologies suitable for these applications, and discusses the feasibility for monolithic integration. Finally, the combination of power and logic functionality on a single chip is motivated and the requirements and limitations for the power semiconductor devices are deduced. The second part describes the evolution of lateral power transistors over the past decades from the simple pin-type concept to double-acting RESURF topologies. It describes the principle of operation for these LDMOS devices and discusses limitations of lateral power devices. Moreover, figures-of-merit are presented which can be used to evaluate the performance of the novel lateral power transistors described in this book with respect to the LDMOS devices. In the last part, [..] the fundamental physical concepts including charge compensation and trench gate topologies are discussed. Also, the status of research in LDMOS devices on silicon carbide is presented. Advantages and drawbacks for each of these integration approaches are summarized, and the feasibility with respect to power electronic applications is evaluated. Note de contenu : Contents: 1 Introduction 2 Demand for Power Electronic Systems and Radio-Frequency Applications 3 Power Electronic and RF Amplifier Circuits 4 Power Semiconductor Devices in Power Electronic Applications 5 Modern MOS-Based Power Device Technologies in Integrated Circuits 6 Lateral Power Transistors with Charge Compensation Patterns 7 Lateral Power Transistors with Trench Patterns 8 Lateral Power Transistors Combining Planar and Trench Gate Topologies 9 Lateral Power Transistors on Wide Bandgap Semiconductors 10 Summary of Integration Concepts for LDMOS Transistors Lateral power transistors in integrated circuits [texte imprimé] / Tobias Erlbacher, Auteur . - New York, Dordrecht, Heidelberg : Springer, 2014 . - 223 p. : couv. ill. en coul., ill. ; 24 cm. ISBN : 978-3-319-00499-0 Langues : Anglais (eng) Catégories : ELECTROTECHNIQUE Index. décimale : 10-05 Electronique de puissance et industrielle Résumé : The book summarizes and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. In its first part, the book motivates the necessity for lateral power transistors by a top-down approach: First, it presents typical energy conversion applications in modern industrial, automotive and consumer electronics. Next, it introduces common circuit topologies suitable for these applications, and discusses the feasibility for monolithic integration. Finally, the combination of power and logic functionality on a single chip is motivated and the requirements and limitations for the power semiconductor devices are deduced. The second part describes the evolution of lateral power transistors over the past decades from the simple pin-type concept to double-acting RESURF topologies. It describes the principle of operation for these LDMOS devices and discusses limitations of lateral power devices. Moreover, figures-of-merit are presented which can be used to evaluate the performance of the novel lateral power transistors described in this book with respect to the LDMOS devices. In the last part, [..] the fundamental physical concepts including charge compensation and trench gate topologies are discussed. Also, the status of research in LDMOS devices on silicon carbide is presented. Advantages and drawbacks for each of these integration approaches are summarized, and the feasibility with respect to power electronic applications is evaluated. Note de contenu : Contents: 1 Introduction 2 Demand for Power Electronic Systems and Radio-Frequency Applications 3 Power Electronic and RF Amplifier Circuits 4 Power Semiconductor Devices in Power Electronic Applications 5 Modern MOS-Based Power Device Technologies in Integrated Circuits 6 Lateral Power Transistors with Charge Compensation Patterns 7 Lateral Power Transistors with Trench Patterns 8 Lateral Power Transistors Combining Planar and Trench Gate Topologies 9 Lateral Power Transistors on Wide Bandgap Semiconductors 10 Summary of Integration Concepts for LDMOS Transistors

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Code-barres	Cote	Support	Localisation	Section	Disponibilité	N.Inventaire
3986	10-05-95	Livre	Bibliothèque de Génie Electrique- USTO	Documentaires	Exclu du prêt	3986