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Electromagnetic analysis using transmission line variables / Maurice Weiner

Public ISBD Titre : Electromagnetic analysis using transmission line variables Type de document : texte imprimé Auteurs : Maurice Weiner, Auteur Editeur : Singapore, New jersey, London, Hong kong : World Scientific Publishing Co. Année de publication : 2001 Importance : 510 p. Présentation : couv. ill. en coul., ill. Format : 22,5 cm. ISBN/ISSN/EAN : 978-981-02-4438-5 Langues : Anglais (eng) Catégories : ELECTROTECHNIQUE Index. décimale : 10-06 Electromagnétisme Résumé : Problems in electromagnetic propagation, especially those with complex geometries, have traditionally been solved using numerical methods, such as the method of finite differences. Unfortunately the mathematical methods suffer from a lack of physical appeal. The researcher or designer often loses sight of the physics underlying the problem, and changes in the mathematical formulation are often not identifiable with any physical change.This book employs a relatively new method for solving electromagnetic problems, one which makes use of a transmission line matrix (TLM). The propagation space is imagined to be filled with this matrix. The propagating fields and physical properties (for example, the presence of conductivity) are then mapped onto the matrix. Mathematically, the procedures are identical with the traditional numerical methods; however, the interpretation and physical appeal of the transmission line matrix are far superior. Any change in the matrix has an immediate physical significance. What is also very important is that the matrix becomes a launching pad for many improvements in the analysis (for example, the nature of coherent waves) using more modern notions of electromagnetic waves. Eventually, the purely mathematical techniques will probably give way to the transmission line matrix method. Note de contenu : Contents: I INTRODUCTION TO TRANSMISSION LINES AND THEIR APPLICATION TO ELECTROMAGNETIC PHENOMENA II NOTATION AND MAPPING OF PHYSICAL PROPERTIES III SCATTERING EQUATIONS IV CORRECTIONS FOR PLANE WAVE AND ANISOTROPY EFFECTS V BOUNDARY CONDITIONS AND DISPERSION VI CELL DISCHARGE PROPERTIES AND INTEGRATION OF TRANSPORT PHENOMENA INTO THE TRANSMISSION LINE MATRIX VII DESCRIPTION OF TLM ITERATION VIII SPICE SOLUTIONS INDEX Electromagnetic analysis using transmission line variables [texte imprimé] / Maurice Weiner, Auteur . - Singapore, New jersey, London, Hong kong : World Scientific Publishing Co., 2001 . - 510 p. : couv. ill. en coul., ill. ; 22,5 cm. ISBN : 978-981-02-4438-5 Langues : Anglais (eng) Catégories : ELECTROTECHNIQUE Index. décimale : 10-06 Electromagnétisme Résumé : Problems in electromagnetic propagation, especially those with complex geometries, have traditionally been solved using numerical methods, such as the method of finite differences. Unfortunately the mathematical methods suffer from a lack of physical appeal. The researcher or designer often loses sight of the physics underlying the problem, and changes in the mathematical formulation are often not identifiable with any physical change.This book employs a relatively new method for solving electromagnetic problems, one which makes use of a transmission line matrix (TLM). The propagation space is imagined to be filled with this matrix. The propagating fields and physical properties (for example, the presence of conductivity) are then mapped onto the matrix. Mathematically, the procedures are identical with the traditional numerical methods; however, the interpretation and physical appeal of the transmission line matrix are far superior. Any change in the matrix has an immediate physical significance. What is also very important is that the matrix becomes a launching pad for many improvements in the analysis (for example, the nature of coherent waves) using more modern notions of electromagnetic waves. Eventually, the purely mathematical techniques will probably give way to the transmission line matrix method. Note de contenu : Contents: I INTRODUCTION TO TRANSMISSION LINES AND THEIR APPLICATION TO ELECTROMAGNETIC PHENOMENA II NOTATION AND MAPPING OF PHYSICAL PROPERTIES III SCATTERING EQUATIONS IV CORRECTIONS FOR PLANE WAVE AND ANISOTROPY EFFECTS V BOUNDARY CONDITIONS AND DISPERSION VI CELL DISCHARGE PROPERTIES AND INTEGRATION OF TRANSPORT PHENOMENA INTO THE TRANSMISSION LINE MATRIX VII DESCRIPTION OF TLM ITERATION VIII SPICE SOLUTIONS INDEX

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Code-barres	Cote	Support	Localisation	Section	Disponibilité	N.Inventaire
1022	10-06-23	Livre	Bibliothèque de Génie Electrique- USTO	Documentaires	Exclu du prêt	1022
1023	10-06-23	Livre	Bibliothèque de Génie Electrique- USTO	Documentaires	Exclu du prêt	1023

Advanced Semiconductor Heterostructures / Mitra Dutta

Public ISBD Titre : Advanced Semiconductor Heterostructures : novel devices, potential device applications and basic properties Type de document : texte imprimé Auteurs : Mitra Dutta, Auteur ; Michael A. Stroscio, Auteur Editeur : Singapore, New jersey, London, Hong kong : World Scientific Publishing Co. Année de publication : 2003 Collection : Selected Topics in Electronics and Systems Importance : 233 p. Présentation : ill. Format : 25,4 cm. ISBN/ISSN/EAN : 978-981-238-289-4 Langues : Anglais (eng) Catégories : SEMI CONDUCTEURS Index. décimale : 27-01 Technologie des matériaux à semi-conducteur Résumé : This volume provides valuable summaries on many aspects of advanced semiconductor heterostructures and highlights the great variety of semiconductor heterostructures that has emerged since their original conception. As exemplified by the chapters in this book, recent progress on advanced semiconductor heterostructures spans a truly remarkable range of scientific fields with an associated diversity of applications. Some of these applications will undoubtedly revolutionize critically important facets of modern technology. At the heart of these advances is the ability to design and control the properties of semiconductor devices on the nanoscale. As an example, the intersubband lasers discussed in this book have a broad range of previously unobtainable characteristics and associated applications as a result of the nanoscale dimensional control of the underlying semiconductor heterostructures. As this book illustrates, an astounding variety of heterostructures can be fabricated with current technology; the potentially widespread use of layered quantum dots fabricated with nanoscale precision in biological applications opens up exciting advances in medicine. In addition, many more excellent examples of the remarkable impact being made through the use of semiconductor heterostructures are given. The summaries in this volume provide timely insights into what we know now about selected areas of advanced semiconductor heterostructures and also provide foundations for further developments. Note de contenu : CONTENTS -NOVEL HETERSTRUCTURE DEVICES ELECTRON-PHONON INTERACTIONS IN INTERSUBBAND LASER HETEROSTRUCTURES QUANTUM DOT INFRARED DETECTORS AND SOURCES Generation of Terahertz Emission Based on Intersubband Transitions MID-INFRARED GaSb-BASED LASERS WITH TYPE-I HETEROINTERFACES ADVANCES IN QUANTUM-DOT RESEARCH AND TECHNOLOGY: THE PATH TO APPLICATION IN BIOLOGY -POTENTIAL DEVICE APPLICATIONS AN BASIC PROPERTIES HIGH-FIELD ELECTRON TRANSPORT CONTROLLED BY OPTICAL PHONON EMISSION IN NITRIDES COOLING BY INVERSE NOTTINGHAM EFFECT WITH RESONANT TUNNELING THE PHYSICS OF SINGLE ELECTRON TRANSISTORS CARRIER CAPTURE AND TRANSPORT WITHIN TUNNEL INJECTION LASERS: A QUANTUM TRANSPORT ANALYSIS THE INFLUENCE OF ENVIRONMENTAL EFFECTS ON THE ACOUSTIC PHONON SPECTRA IN QUANTUM-DOT HETEROSTRUCTURES QUANTUM DEVICES WITH MULTIPOLE-ELECTRODE - HETEROJUNCTIONS HYBRID STRUCTURES Advanced Semiconductor Heterostructures : novel devices, potential device applications and basic properties [texte imprimé] / Mitra Dutta, Auteur ; Michael A. Stroscio, Auteur . - Singapore, New jersey, London, Hong kong : World Scientific Publishing Co., 2003 . - 233 p. : ill. ; 25,4 cm.. - (Selected Topics in Electronics and Systems) . ISBN : 978-981-238-289-4 Langues : Anglais (eng) Catégories : SEMI CONDUCTEURS Index. décimale : 27-01 Technologie des matériaux à semi-conducteur Résumé : This volume provides valuable summaries on many aspects of advanced semiconductor heterostructures and highlights the great variety of semiconductor heterostructures that has emerged since their original conception. As exemplified by the chapters in this book, recent progress on advanced semiconductor heterostructures spans a truly remarkable range of scientific fields with an associated diversity of applications. Some of these applications will undoubtedly revolutionize critically important facets of modern technology. At the heart of these advances is the ability to design and control the properties of semiconductor devices on the nanoscale. As an example, the intersubband lasers discussed in this book have a broad range of previously unobtainable characteristics and associated applications as a result of the nanoscale dimensional control of the underlying semiconductor heterostructures. As this book illustrates, an astounding variety of heterostructures can be fabricated with current technology; the potentially widespread use of layered quantum dots fabricated with nanoscale precision in biological applications opens up exciting advances in medicine. In addition, many more excellent examples of the remarkable impact being made through the use of semiconductor heterostructures are given. The summaries in this volume provide timely insights into what we know now about selected areas of advanced semiconductor heterostructures and also provide foundations for further developments. Note de contenu : CONTENTS -NOVEL HETERSTRUCTURE DEVICES ELECTRON-PHONON INTERACTIONS IN INTERSUBBAND LASER HETEROSTRUCTURES QUANTUM DOT INFRARED DETECTORS AND SOURCES Generation of Terahertz Emission Based on Intersubband Transitions MID-INFRARED GaSb-BASED LASERS WITH TYPE-I HETEROINTERFACES ADVANCES IN QUANTUM-DOT RESEARCH AND TECHNOLOGY: THE PATH TO APPLICATION IN BIOLOGY -POTENTIAL DEVICE APPLICATIONS AN BASIC PROPERTIES HIGH-FIELD ELECTRON TRANSPORT CONTROLLED BY OPTICAL PHONON EMISSION IN NITRIDES COOLING BY INVERSE NOTTINGHAM EFFECT WITH RESONANT TUNNELING THE PHYSICS OF SINGLE ELECTRON TRANSISTORS CARRIER CAPTURE AND TRANSPORT WITHIN TUNNEL INJECTION LASERS: A QUANTUM TRANSPORT ANALYSIS THE INFLUENCE OF ENVIRONMENTAL EFFECTS ON THE ACOUSTIC PHONON SPECTRA IN QUANTUM-DOT HETEROSTRUCTURES QUANTUM DEVICES WITH MULTIPOLE-ELECTRODE - HETEROJUNCTIONS HYBRID STRUCTURES

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Code-barres	Cote	Support	Localisation	Section	Disponibilité	N.Inventaire
2885	27-01-12	Livre	Bibliothèque de Génie Electrique- USTO	Documentaires	Exclu du prêt	2885

Quantum theory of the optical and electronic properties of semiconductors / Hartmut Haug

Public ISBD Titre : Quantum theory of the optical and electronic properties of semiconductors Type de document : texte imprimé Auteurs : Hartmut Haug, Auteur ; Stephan W. Koch, Auteur Mention d'édition : 5th ed. Editeur : Singapore, New jersey, London, Hong kong : World Scientific Publishing Co. Année de publication : 2009 Importance : 469 p. Présentation : couv. ill. en en coul Format : 22,5 cm. ISBN/ISSN/EAN : 978-981-283-884-1 Langues : Anglais (eng) Catégories : SEMI CONDUCTEURS Index. décimale : 27-04 Propriétés électriques des composants à semi-conducteur(transistor-diode) Résumé : This invaluable textbook presents the basic elements needed to understand and research into semiconductor physics. It deals with elementary excitations in bulk and low-dimensional semiconductors, including quantum wells, quantum wires and quantum dots. The basic principles underlying optical nonlinearities are developed, including excitonic and many-body plasma effects. Fundamentals of optical bistability, semiconductor lasers, femtosecond excitation, the optical Stark effect, the semiconductor photon echo, magneto-optic effects, as well as bulk and quantum-confined Franz-Keldysh effects, are covered. The material is presented in sufficient detail for graduate students and researchers with a general background in quantum mechanics.This fifth edition includes an additional chapter on 'Quantum Optical Effects' where the theory of quantum optical effects in semiconductors is detailed. Besides deriving the 'semiconductor luminescence equations' and the expression for the stationary luminescence spectrum, results are presented to show the importance of Coulombic effects on the semiconductor luminescence and to elucidate the role of excitonic populations. Note de contenu : Contents 1 Oscillator Model 2 Atoms in a Classical Light Field 3 Periodic Lattice of Atoms 29 4 Mesoscopic Semiconductor Structures 5 Free Carrier Transitions 6 Ideal Quantum Gases 7 Interacting Electron Gas 8 Plasmons and Plasma Screening 9 Retarded Greens Function for Electrons 10 Excitons 11 Polaritons 12 Semiconductor Bloch Equations 13 Excitonic Optical Stark Effect 14 WaveMixing Spectroscopy 15 Optical Properties of a QuasiEquilibrium Electron Hole Plasma 16 Optical Bistability 17 Semiconductor Laser 18 Electroabsorption 19 Magneto-Optics 20 Quantum Dots 21 Coulomb Quantum Kinetics 22 Quantum optical effects Appendix A Field Quantization Appendix B ContourOrdered Greens Functions Index Quantum theory of the optical and electronic properties of semiconductors [texte imprimé] / Hartmut Haug, Auteur ; Stephan W. Koch, Auteur  . -  5th ed. . - Singapore, New jersey, London, Hong kong : World Scientific Publishing Co., 2009 . - 469 p. : couv. ill. en en coul ; 22,5 cm. ISBN : 978-981-283-884-1 Langues : Anglais (eng) Catégories : SEMI CONDUCTEURS Index. décimale : 27-04 Propriétés électriques des composants à semi-conducteur(transistor-diode) Résumé : This invaluable textbook presents the basic elements needed to understand and research into semiconductor physics. It deals with elementary excitations in bulk and low-dimensional semiconductors, including quantum wells, quantum wires and quantum dots. The basic principles underlying optical nonlinearities are developed, including excitonic and many-body plasma effects. Fundamentals of optical bistability, semiconductor lasers, femtosecond excitation, the optical Stark effect, the semiconductor photon echo, magneto-optic effects, as well as bulk and quantum-confined Franz-Keldysh effects, are covered. The material is presented in sufficient detail for graduate students and researchers with a general background in quantum mechanics.This fifth edition includes an additional chapter on 'Quantum Optical Effects' where the theory of quantum optical effects in semiconductors is detailed. Besides deriving the 'semiconductor luminescence equations' and the expression for the stationary luminescence spectrum, results are presented to show the importance of Coulombic effects on the semiconductor luminescence and to elucidate the role of excitonic populations. Note de contenu : Contents 1 Oscillator Model 2 Atoms in a Classical Light Field 3 Periodic Lattice of Atoms 29 4 Mesoscopic Semiconductor Structures 5 Free Carrier Transitions 6 Ideal Quantum Gases 7 Interacting Electron Gas 8 Plasmons and Plasma Screening 9 Retarded Greens Function for Electrons 10 Excitons 11 Polaritons 12 Semiconductor Bloch Equations 13 Excitonic Optical Stark Effect 14 WaveMixing Spectroscopy 15 Optical Properties of a QuasiEquilibrium Electron Hole Plasma 16 Optical Bistability 17 Semiconductor Laser 18 Electroabsorption 19 Magneto-Optics 20 Quantum Dots 21 Coulomb Quantum Kinetics 22 Quantum optical effects Appendix A Field Quantization Appendix B ContourOrdered Greens Functions Index

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Code-barres	Cote	Support	Localisation	Section	Disponibilité	N.Inventaire
2778	27-04-03	Livre	Bibliothèque de Génie Electrique- USTO	Documentaires	Exclu du prêt	2778
2779	27-04-03	Livre	Bibliothèque de Génie Electrique- USTO	Documentaires	Exclu du prêt	2779