| Titre : | Optoelectronic sensors | | Type de document : | texte imprimé | | Auteurs : | Didier Decoster, Auteur ; Joseph Harari, Auteur | | Editeur : | USA : John wiley & Sons | | Année de publication : | 2009 | | Importance : | 274 p. | | Présentation : | couv. ill. en coul., ill. | | Format : | 24 cm. | | ISBN/ISSN/EAN : | 978-1-84821-078-3 | | Langues : | Anglais (eng) | | Catégories : | ELECTRONIQUE
| | Index. décimale : | 09-09 capteurs | | Résumé : | This book provides accessible and authoritative coverage of semiconductor-based photodetectors for various optical wavelengths. It begins by explaining the main characteristics of all photodetectors, before moving on to cover the classical PIN photodiode, the avalanche photodiode, phototransistors, the metal-semiconductor-metal photodiode and photodetectors designed for ultraviolet wavelengths. Coverage concludes with a discussion of the issues surrounding the very important question of noise in these types of sensors.
Written by a wide range of specialists in this field, this book represents an indispensable resource for those looking to increase their understanding of optoelectronics. | | Note de contenu : | Table of contents:
Chapter 1. Introduction to Semiconductor Photodetectors
1.1. Brief overview of semiconductor materials
1.2. Photodetection with semiconductors: basic phenomena
1.3. Semiconductor devices
1.4. p-n junctions and p-i-n structures
1.5. Avalanche effect in p-i-n structures
1.6. Schottky junction
1.7. Metal-semiconductor-metal (MSM) structures
1.8. Operational parameters of photodetectors
Chapter 2. PIN Photodiodes for the Visible and Near-Infrared
2.1. Introduction 15
2.2. Physical processes occurring in photodiodes
2.3. Static characteristics of PIN photodiodes
2.4. Dynamic characteristics of PIN photodiodes
2.5. Semiconductor materials used in PIN photodiodes for the visible and near-infrared
2.6. New photodiode structures
Chapter 3. Avalanche Photodiodes
3.1. Introduction
3.2. History
3.3. The avalanche effect
3.4. Properties of avalanche photodiodes
3.5. Technological considerations
3.6. Silicon avalanche photodiodes
3.7. Avalanche photodiodes based on gallium arsenide
3.8. Germanium avalanche photodiodes
3.9. Avalanche photodiodes based on indium phosphate (InP)
3.10. III-V low-noise avalanche photodiodes
3.11. Prospects
Chapter 4. Phototransistors
4.1. Introduction
4.2. Phototransistors
4.3. The bipolar phototransistor: description and principles of operation
4.4. Photodetector circuits based on phototransistors
4.5. Applications
Chapter 5. Metal-Semiconductor-Metal Photodiodes
5.1. Introduction
5.2. Operation and structure
5.3. Static and dynamic characteristics
5.4. Integration possibilities and conclusion
Chapter 6. Ultraviolet Photodetectors
6.1. Introduction
6.2. The UV-visible contrast
6.3. Si and SiC photodetectors for UV photodetection
6.4. UV detectors based on III-V nitrides
Chapter 7. Noise in Photodiodes and Photoreceiver Systems
7.1. Mathematical tools for noise
7.2. Fundamental noise sources
7.3. Excess noise
7.4. Analysis of noise electrical circuits
7.5. Noise in photodetectors
7.6. Noise optimization of photodetectors
7.7. Calculation of the noise of a photoreceiver
-Index |
Optoelectronic sensors [texte imprimé] / Didier Decoster, Auteur ; Joseph Harari, Auteur . - USA : John wiley & Sons, 2009 . - 274 p. : couv. ill. en coul., ill. ; 24 cm. ISBN : 978-1-84821-078-3 Langues : Anglais ( eng) | Catégories : | ELECTRONIQUE
| | Index. décimale : | 09-09 capteurs | | Résumé : | This book provides accessible and authoritative coverage of semiconductor-based photodetectors for various optical wavelengths. It begins by explaining the main characteristics of all photodetectors, before moving on to cover the classical PIN photodiode, the avalanche photodiode, phototransistors, the metal-semiconductor-metal photodiode and photodetectors designed for ultraviolet wavelengths. Coverage concludes with a discussion of the issues surrounding the very important question of noise in these types of sensors.
Written by a wide range of specialists in this field, this book represents an indispensable resource for those looking to increase their understanding of optoelectronics. | | Note de contenu : | Table of contents:
Chapter 1. Introduction to Semiconductor Photodetectors
1.1. Brief overview of semiconductor materials
1.2. Photodetection with semiconductors: basic phenomena
1.3. Semiconductor devices
1.4. p-n junctions and p-i-n structures
1.5. Avalanche effect in p-i-n structures
1.6. Schottky junction
1.7. Metal-semiconductor-metal (MSM) structures
1.8. Operational parameters of photodetectors
Chapter 2. PIN Photodiodes for the Visible and Near-Infrared
2.1. Introduction 15
2.2. Physical processes occurring in photodiodes
2.3. Static characteristics of PIN photodiodes
2.4. Dynamic characteristics of PIN photodiodes
2.5. Semiconductor materials used in PIN photodiodes for the visible and near-infrared
2.6. New photodiode structures
Chapter 3. Avalanche Photodiodes
3.1. Introduction
3.2. History
3.3. The avalanche effect
3.4. Properties of avalanche photodiodes
3.5. Technological considerations
3.6. Silicon avalanche photodiodes
3.7. Avalanche photodiodes based on gallium arsenide
3.8. Germanium avalanche photodiodes
3.9. Avalanche photodiodes based on indium phosphate (InP)
3.10. III-V low-noise avalanche photodiodes
3.11. Prospects
Chapter 4. Phototransistors
4.1. Introduction
4.2. Phototransistors
4.3. The bipolar phototransistor: description and principles of operation
4.4. Photodetector circuits based on phototransistors
4.5. Applications
Chapter 5. Metal-Semiconductor-Metal Photodiodes
5.1. Introduction
5.2. Operation and structure
5.3. Static and dynamic characteristics
5.4. Integration possibilities and conclusion
Chapter 6. Ultraviolet Photodetectors
6.1. Introduction
6.2. The UV-visible contrast
6.3. Si and SiC photodetectors for UV photodetection
6.4. UV detectors based on III-V nitrides
Chapter 7. Noise in Photodiodes and Photoreceiver Systems
7.1. Mathematical tools for noise
7.2. Fundamental noise sources
7.3. Excess noise
7.4. Analysis of noise electrical circuits
7.5. Noise in photodetectors
7.6. Noise optimization of photodetectors
7.7. Calculation of the noise of a photoreceiver
-Index |
|  |
Optoelectronic sensors / Didier Decoster
