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High-Frequency Bipolar Transistors / M. Reisch

Public ISBD Titre : High-Frequency Bipolar Transistors : Physics, Modelling, Applications Type de document : texte imprimé Auteurs : M. Reisch, Auteur Editeur : New York : Springer-Verlag Année de publication : 2003 Importance : 658 p. Présentation : couv. ill. en coul., ill. Format : 24 cm. ISBN/ISSN/EAN : 978-3-540-67702-4 Langues : Anglais (eng) Index. décimale : 09-04 Technologie de composants Résumé : The book gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology with particular emphasis given to todays advanced compact models and their physical foundations. The first part introduces the fundamentals of bipolar transistors on a graduate student level. The second part considers the physics and modeling of bipolar transistors in detail. Part 3 describes basic circuit configurations, aspects of process integration and applications. Note de contenu : Table of contents: 1-An Introductory Survey 2-Semiconductor Physics Required for Bipolar-Transistor Modeling 3-Physics and Modeling of Bipolar Junction Transistors 4-Physics and Modeling of Heterojunction Bipolar Transistors 5-Noise Modeling 6-Basic Circuit Configurations 7-Process Integration 8-Applications High-Frequency Bipolar Transistors : Physics, Modelling, Applications [texte imprimé] / M. Reisch, Auteur . - New York : Springer-Verlag, 2003 . - 658 p. : couv. ill. en coul., ill. ; 24 cm. ISBN : 978-3-540-67702-4 Langues : Anglais (eng) Index. décimale : 09-04 Technologie de composants Résumé : The book gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology with particular emphasis given to todays advanced compact models and their physical foundations. The first part introduces the fundamentals of bipolar transistors on a graduate student level. The second part considers the physics and modeling of bipolar transistors in detail. Part 3 describes basic circuit configurations, aspects of process integration and applications. Note de contenu : Table of contents: 1-An Introductory Survey 2-Semiconductor Physics Required for Bipolar-Transistor Modeling 3-Physics and Modeling of Bipolar Junction Transistors 4-Physics and Modeling of Heterojunction Bipolar Transistors 5-Noise Modeling 6-Basic Circuit Configurations 7-Process Integration 8-Applications

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Code-barres	Cote	Support	Localisation	Section	Disponibilité	N.Inventaire
115	09-04-02	Livre	Bibliothèque de Génie Electrique- USTO	Documentaires	Exclu du prêt	115