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AB2C4 Semiconducting compounds / GOLEA Mostefa

Public ISBD Titre : AB2C4 Semiconducting compounds : Crystal Growth , intrinsic defects and optical properties Type de document : texte imprimé Auteurs : GOLEA Mostefa, Auteur Année de publication : 1988 Importance : 98 p. Langues : Anglais (eng) Catégories : Physique Mots-clés : AB2C4 Semiconducting compounds  ntrinsic defects , optical properties Résumé : A critical review of the literature of AB2 C4 compounds is presented , the application of Bridgman-stock Barger technique to the growth of single crystals’ of ternary compound CDIn S4 described in details single crystals of good optical quality have been prepared by this method , the absorption spectra of CDI n2S have been measured at room temperature and liquid N2 temperature and the results indicte that this compound has an indirect-allowed transition at 2.02ev and a direct –allowed transition at 2.41 (at R.T) the absorption tail below the fundamental absorption edge has been analyzed and related to form of trap distribution below the conduction band , a thermodynamic approach based on the influence of deviation from ideal composition on the properties of crystals is used to establish the predominant intrinsic defects in AB2C4 compounds, the reasons which make it difficult to control the type conduction in linear susceptibil ity with substitutional variations of isolectronnic elements in non- metallic compounds is given , the general trend observed in these changes may be useful for practical application of the multinary materials La literature concernant les composes AB2C4 est passée en revue afin de souligner les problémes et les désaccords , l’application de la technique de Bridgman –stockarges à la croissance des cristaux du composé ternaire CdIn 2S4 décrite en details , des cristaux de bonne qualité optique furent preparés par cette méthode Directeur de thèse : Pierre Bernard AB2C4 Semiconducting compounds : Crystal Growth , intrinsic defects and optical properties [texte imprimé] / GOLEA Mostefa, Auteur . - 1988 . - 98 p. Langues : Anglais (eng) Catégories : Physique Mots-clés : AB2C4 Semiconducting compounds  ntrinsic defects , optical properties Résumé : A critical review of the literature of AB2 C4 compounds is presented , the application of Bridgman-stock Barger technique to the growth of single crystals’ of ternary compound CDIn S4 described in details single crystals of good optical quality have been prepared by this method , the absorption spectra of CDI n2S have been measured at room temperature and liquid N2 temperature and the results indicte that this compound has an indirect-allowed transition at 2.02ev and a direct –allowed transition at 2.41 (at R.T) the absorption tail below the fundamental absorption edge has been analyzed and related to form of trap distribution below the conduction band , a thermodynamic approach based on the influence of deviation from ideal composition on the properties of crystals is used to establish the predominant intrinsic defects in AB2C4 compounds, the reasons which make it difficult to control the type conduction in linear susceptibil ity with substitutional variations of isolectronnic elements in non- metallic compounds is given , the general trend observed in these changes may be useful for practical application of the multinary materials La literature concernant les composes AB2C4 est passée en revue afin de souligner les problémes et les désaccords , l’application de la technique de Bridgman –stockarges à la croissance des cristaux du composé ternaire CdIn 2S4 décrite en details , des cristaux de bonne qualité optique furent preparés par cette méthode Directeur de thèse : Pierre Bernard

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Code-barres	Cote	Support	Localisation	Section	Disponibilité
8077	02-05-155	version papier	Bibliothèque USTOMB	Mémoire de Magister	Exclu du prêt